This paper focuses on the extraction of an accurate small-signal equivalent circuit for\nmetal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was\ndeveloped and successfully validated through the comparison between measured and simulated\nscattering parameters. The extraction of the equivalent circuit elements allowed for the estimation\nof the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing\nthe high-frequency performance. The experimental data show that the cutoff frequency of the tested\ndevices exhibits a nearly ideal scaling behavior with decreasing gate length.
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